High efficiency 35 GHz MMICs based on 0.2 μm AlGaN/GaN HEMT technology

Abstract In this paper, two high efficiency monolithic microwave integrated circuits (MMICs) are demonstrated using NANOTAM's in-house Ka -band fabrication technology. AlGaN/GaN HEMTs with 0.2 ${\rm \mu}$ m gate lengths characterized, and an output power density of 2.9 W/mm is achieved at 35 GHz. A three-stage driver amplifier MMIC designed, which has a measured gain higher than 19.3 dB across the frequency band 33–36 The exhibits 31.9 26.5% power-added (PAE) GHz 20 V supply voltage 30% duty cycle. Another two-stage realized as total periphery 1.8 mm. PAE 3.91 W 26.3%, respectively, MMICs presented in paper exhibit capabilities $\rm\mu$ on SiC